2SD1399

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1399 DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching APPLICATIONS ·For horizontal output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7 6 16 50 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=100mA; RBE=∞ MIN 2SD1399 TYP. MAX UNIT V(BR)CEO Collector- emitter breakdown voltage 800 V V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 1500 V V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 5.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A 1.5 V μA ICBO Collector cut-off current VCB=800V; IE=0 10 IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA hFE DC current gain IC=1A ; VCE=5V 8 fT Transition frequency IC=1A ; VCE=10V IC=5A;IB1=1A; IB2=-2A, VCC=200V; RL=40Ω IEC=6A 3 MHz μs tf Fall time 0.7 VF Diode forward voltage 2.0 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1399 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3