2SD1404

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1404 DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode APPLICATIONS ·B/W TV horizontal deflection output applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC ICM Collector Current-Continuous 7 A Collector Current-Peak 15 A IB B Base Current-Continuous Collector Power Dissipation Ta=25℃ 2 A 2 W PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 25 150 ℃ ℃ Tstg Storage Ttemperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1404 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 50mH 150 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1A; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V ICES Collector Cutoff Current VCE= 250V; VBE= 0 1 mA hFE DC Current Gain IC= 5A ; VCE= 1.5V 10 fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V 18 MHz VECF C-E Diode Forward Voltage IF= 6A 1.8 V tf Fall Time ICP= 5A; IB1(end)= 0.5A 1.0 μs isc Website：www.iscsemi.cn