2SD1406

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1406 DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25℃ ·Low collector saturation voltage ·Complement to type 2SB1015 APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 60 60 7 3 0.5 2.0 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA; IB=0 IC=3A; IB=0.3A IC=0.5A ; VCE=5V VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=0.5A; VCE=5V IE=0 ;f=1MHz ; VCB=10V 60 20 3 70 MIN 60 2SD1406 TYP. MAX UNIT V 0.25 0.7 1.0 1.0 100 100 300 V V μA μA MHz pF Switching times ton ts tf Trun-on time Storage time Fall time RL=15Ω;VCC=30V IB1=-IB2=0.2A 0.8 1.5 0.8 μs μs μs hFE-1 Classifications O 60-120 Y 100-200 GR 150-300 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1406 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1406 4