2SD1407

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1407 DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・Low collector saturation voltage ・Complement to type 2SB1016 APPLICATIONS ・Power amplifier applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 5 0.5 30 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA; IB=0 IC=4A; IB=0.4A IC=1A; VCE=5V VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IC=1A; VCE=5V f=1MHz ; VCB=10V;IE=0 40 20 12 100 MIN 100 TYP. 2SD1407 MAX UNIT V 2.0 1.5 100 1.0 240 V V μA mA MHz pF hFE-1 Classifications R 40-80 O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1407 Fig.2 Outline dimensions(unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1407 4