2SD1408

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1408 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.5V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·Complement to Type 2SB1017 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ 0.4 A PC 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 50mA ; IB= 0 IC= 3A; IB= 0.3A B 2SD1408 MIN 80 TYP. MAX UNIT V 1.5 1.5 30 0.1 40 15 90 8 240 V V μA mA IC= 3A; VCE= 5V VCB= 80V; IE= 0 VEB= 5V; IC= 0 IC= 0.5A; VCE= 5V IC= 3A; VCE= 5V IE= 0; VCB= 10V, ftest= 1MHz IC= 0.5A; VCE= 5V pF MHz hFE classifications R 40-80 O 70-140 Y 120-240 isc Website：www.iscsemi.cn 2