2SD1412

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V (Min) ·Complement to Type 2SB1019 APPLICATIONS ·High current switching applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB B Base Current-Continuous Collector Power Dissipation @ Ta=25℃ 1 A 2 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 50mA ; IB= 0 IC= 4A; IB= 0.4A B 2SD1412 MIN 50 TYP. MAX UNIT V 0.4 1.2 30 50 70 30 250 10 240 V V μA μA IC= 4A; IB= 0.4A B VCB= 70V; IE= 0 VEB= 5V; IC= 0 IC= 1A; VCE= 1V IC= 4A; VCE= 1V IE= 0; VCB= 10V, ftest= 1MHz IC= 1A; VCE= 4V pF MHz Switching Times Turn-on Time Storage Time Fall Time IB1= -IB2= 0.3A; RL= 10Ω; VCC= 30V 0.2 2.5 0.5 μs μs μs ton tstg tf hFE classifications O 70-140 Y 120-240 isc Website：www.iscsemi.cn 2