2SD1415A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415A DESCRIPTION ·With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current peak Base current TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2.0 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 120 100 6 7 10 0.7 25 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=50mA; IB=0 IC=3A ;IB=6mA IC=3A ;IB=6mA VCB=100V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=3V IC=6A ; VCE=3V 2000 1000 MIN 100 0.9 1.5 1.5 2.0 100 3.0 15000 TYP. MAX UNIT V V V μA mA Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=6mA VCC≈45V ,RL=15Ω 0.3 5.1 0.6 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1415A Fig.2 Outline dimensions 3