2SD1416

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1416 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Complement to Type 2SB1021 APPLICATIONS ·Hammer driver,pulse motor drive applications. ·High power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 0.2 A PC 30 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1416 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA B 2.0 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 3A; IB= 6mA B 2.5 V μA Collector Cutoff Current VCB= 80V; IE= 0 100 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE -1 DC Current Gain IC= 3A; VCE= 3V 2000 15000 hFE -2 DC Current Gain IC= 7A; VCE= 3V 1000 Switching times μs μs μs ton Turn-on Time IB1= -IB2= 6mA RL= 15Ω; VCC= 45V PW=20μs; Duty Cycle≤1% 0.8 tstg Storage Time 3.0 tf Fall Time 2.5 isc Website：www.iscsemi.cn 2