2SD1417

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1417 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1022 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2.0 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 60 60 5 7 0.2 30 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=50mA; IB=0 IC=3A ;IB=6mA IC=7A ;IB=14mA IC=3A ;IB=6mA VCB=60V; IE=0 VEB=5V; IC=0 IC=3A ; VCE=3V IC=7A ; VCE=3V 2000 1000 MIN 60 0.9 1.2 1.5 2SD1417 TYP. MAX UNIT V 1.5 2.0 2.5 100 3.0 15000 V V V μA mA Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=6mA VCC≈45V ,RL=15Ω 0.8 3.0 2.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1417 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3