2SD1426

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1426 DESCRIPTION ·With TO-3P(H)1S package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV deflection circuits PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 3.5 1.0 80 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 1.56 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1426 TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0 5 V VCE(sat) VBE(sat) Collector-emitter saturation voltage IC=3A; IB=0.8A IC=3A; IB=0.8A 8.0 V Base-emitter saturation voltage 1.5 V μA ICBO Collector cut-off current VCB=500V; IE=0 10 hFE DC current gain IC=0.5A ; VCE=5V 8 fT Transition freuqency IC=0.1A ; VCE=10V;f=1MHz 3 MHz COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz 95 pF VF tf Diode forward voltage IF=3.5A IC=3A;IB1=0.8A 2.0 V μs Fall time 1.0 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1426 Fig.2 outline dimensions (unindicated tolerance:±0.15 mm) 3