2SD1430

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1430 DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV horizontal output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IE PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1500 600 5 3.5 -3.5 80 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1430 TYP. MAX UNIT VCE(sat) Collector-emitter saturation voltage IC=3A; IB=0.8A 4.0 8.0 V VBE(sat) ICBO Base-emitter saturation voltage IC=3A; IB=0.8A VCB=500V; IE=0 1.5 V μA Collector cut-off current 10 IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE DC current gain IC=0.5A ; VCE=5V 8 20 fT Transition freuqency IC=0.1A ; VCE=10V 3 MHz COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz 95 pF μs tf Fall time IC=3A;IB1=0.8A 1.0 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1430 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3