2SD1437

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1437 DESCRIPTION ·Collector-Emitter Breakdown Voltage :V(BR)CEO= 60V(Min) ·Complement to Type 2SB1033 ·Low Collector Saturation Voltage APPLICATIONS ·Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A PC Total Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 10mA ; IB= 0 IC= 0.1mA ; IE= 0 IE= 0.1mA ; IC= 0 IC= 2A; IB= 0.2A B 2SD1437 MIN 60 80 5 TYP. MAX UNIT V V V 1.0 1.5 10 10 60 8 90 320 V V μA μA IC= 2A; IB= 0.2A B VCB= 60V ; IE= 0 VEB= 5V; IC= 0 IC= 1A ; VCE= 5V IC= 0.5A ; VCE= 5V IE= 0; VCB= 10V; ftest= 1MHz MHz pF hFE Classifications D 60-120 E 100-200 F 160-320 isc Website：www.iscsemi.cn 2