2SD1439

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1439 DESCRIPTION ·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCES VEBO IC ICP IBP PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Peak Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Junction Temperature Storage Temperature Range VALUE 1500 1500 5 3 10 3.5 50 W 2.5 150 -65-150 ℃ ℃ UNIT V V V A A A Tj Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)EBO VCE(sat) VBE(sat) hFE PARAMETER Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain CONDITIONS IE= 500mA; IC= 0 IC= 2A; IB= 0.75A IC= 2A; IB= 0.75A IC= 2A ; VCE= 10V VCB= 750V; IE= 0 ICBO Collector Cutoff Current VCB= 1500V; IE= 0 VECF fT C-E Diode Forward Voltage Transition Frequency IF= 2A IC= 0.5A ; VCE= 10V 2 4 MIN 5 2SD1439 TYP MAX UNIT V 5.0 1.5 12 50 1.0 2.2 V V μA mA V MHz Switching Times ts tf Storage Time IC= 2A; IB= 0.75A; Lleak= 5μH Fall Time 0.75 μs 7 μs isc Website：www.iscsemi.cn