2SD1440

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1440 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 3.5 A ICP Collector Current-Peak 13 A IBP Base Current-Peak Collector Power Dissipation @ Ta= 25℃ 3.5 A 2.5 W PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 65 130 ℃ Tstg Storage Temperature Range -55~130 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1440 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A VCB= 750V; IE= 0 VCB= 1500V; IE= 0 IC= 2.5A; VCE= 10V 4 1.5 50 1.0 15 V μA mA ICBO Collector Cutoff Current hFE DC Current Gain fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 2 MHz VECF C-E Diode Forward Voltage IF= 4A 2.2 V ts Storage Time IC= 2.5A, IBend= 0.8A, Lleak= 5μH 9.0 μs tf Fall Time 0.8 μs isc Website：www.iscsemi.cn 2