2SD1444A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High speed switching ・High collector current ・Complement to type 2SB953/953A APPLICATIONS ・Power amplifiers ・Low voltage switching PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SD1444 2SD1444A Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SD1444 VCBO Collector-base voltage 2SD1444A 2SD1444 VCEO Collector-emitter voltage 2SD1444A VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ Open collector Open base 40 5 7 12 30 W V A A Open emitter 50 20 V CONDITIONS VALUE 40 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD1444 V(BR)CEO Collector-emitter breakdown voltage 2SD1444A VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2SD1444 ICBO Collector cut-off current 2SD1444A IEBO hFE-1 hFE-2 fT COB Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance VCB=50V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=2A ; VCE=2V IC=0.5A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IC=5A; IB=0.16A IC=5A; IB=0.16A VCB=40V; IE=0 IC=10mA , IB=0 CONDITIONS 2SD1444 2SD1444A MIN 20 TYP. MAX UNIT V 40 0.6 1.5 V V 50 μA 50 45 60 150 110 260 μA MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time IC=2A; IB1=-IB2=66mA 0.3 0.3 0.1 μs μs μs hFE-2 Classifications R 60-120 Q 90-180 P 130-260 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1444 2SD1444A Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3