2SD1455

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1455 DESCRIPTION ・With TO-3PN package ・High voltage,high speed ・Built-in damper diode APPLICATIONS ・For TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current (DC) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open collector VALUE 1500 6 5 50 150 -45~150 UNIT V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCEsat VBEsat ICBO hFE VF PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Diode forward voltage CONDITIONS IE=200mA; IC=0 IC=4.5A; IB=1.2A IC=4.5A; IB=1.2A VCB=1500V; IE=0 IC=1A ; VCE=5V IF=5A 6 MIN 6 2SD1455 TYP. MAX UNIT V 5.0 1.5 0.5 V V mA 2.2 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1455 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3