2SD1457

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1457 2SD1457A DESCRIPTION ・With TO-3PFa package ・High DC current gain ・DARLINGTON ・High VCBO APPLICATIONS ・For power amplification PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PFa) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO PARAMETER Collector-base voltage 2SD1457 VCEO Collector-emitter voltage 2SD1457A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 3.0 150 -55~150 ℃ ℃ Open collector Open base 200 5 6 10 60 W V A A CONDITIONS Open emitter MAX 200 150 V UNIT V Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD1457 VCEO(SUS) Collector-emitter sustaining voltage 2SD1457A V(BR)EBO VCEsat VBEsat ICBO hFE fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Transition frequency IE=0.1A ;IC=0 IC=3A ;IB=60mA IC=3A ;IB=60mA VCB=200V; IE=0 IC=2A ; VCE=2V IC=0.5A ; VCE=10V;f=1MHz IC=2A ;L=10mH CONDITIONS 2SD1457 2SD1457A MIN 150 TYP. MAX UNIT V 200 5 1.5 2.5 100 700 15 10000 MHz V V V μA hFE Classifications Q 700-2500 P 2000-5000 O 4000-10000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1457 2SD1457A Fig.2 outline dimensions (unindicated tolerance:±0.30mm) 3