2SD1480

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1480 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB1052 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ 4 A 25 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(on) ICES IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 30mA; IB= 0 IC= 2A; IB= 0.2A B 2SD1480 MIN 60 TYP. MAX UNIT V 2.0 1.2 200 1 35 40 250 V V μA mA IC= 1A; VCE= 4V VCE= 60V; VBE= 0 VEB= 6V; IC= 0 IC= 0.1A; VCE= 4V IC= 1A; VCE= 4V Switching times Turn-on Time Storage Time Fall Time IC= 1A; IB1= -IB2= 0.1A 0.2 3.5 0.7 μs μs μs ton tstg tf hFE-1 classifications R 40-90 Q 70-150 P 120-250 isc Website：www.iscsemi.cn 2