Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1486
DESCRIPTION ·With TO-3PFa package ·Complement to type 2SB1055 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
·
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 120 120 5 6 10 70 W UNIT V V V A A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=4A ;IB=0.4A IC=4A ; VCE=5V VCB=120V; IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC=1A ; VCE=5V IC=4A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=-5V 20 40 20 230 20 MIN TYP.
2SD1486
MAX 2.0 1.8 50 50
UNIT V V μA μA
200
pF MHz
hFE-2 classifications R 40-80 Q 60-120 P 100-200
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1486
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1486
4
很抱歉,暂时无法提供与“2SD1486”相匹配的价格&库存,您可以联系我们找货
免费人工找货