2SD1492

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1492 DESCRIPTION ·With TO-3PN package ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·High voltage power switching TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 6 1.5 50 150 -45~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1492 TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 IC=10mA; RBE=∞ IC=1.2A; IB=0.3A 6 V V(BR)CEO VCEsat Collector-emitter breakdown voltage 600 V Collector-emitter saturation voltage 5.0 V VBEsat Base-emitter saturation voltage IC=1.2A; IB=0.3A 1.5 V ICEX Collector cut-off current VCE=1500V; VBE=1.5V 1.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 mA hFE DC current gain IC=0.3A ; VCE=5V 10 30 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1492 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3