2SD1495

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1495 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed APPLICATIONS ·Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous Collector Power Dissipation @ TC= 25℃ 4 A PC 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1495 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 600 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3.5A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB= 600V; IE= 0 10 μA hFE DC Current Gain IC= 1A; VCE= 5V 6 isc Website：www.iscsemi.cn 2