2SD1499

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1499 DESCRIPTION ·With TO-220Fa package ·High transition frequency ·Complement to type 2SB1063 ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-Peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 40 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 5 8 2.0 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1499 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 100 V VCEsat VBE Collector-emitter saturation voltage IC=3A; IB=0.3A IC=3A ; VCE=5V 2.0 V Base-emitter on voltage 1.8 V μA μA ICBO Collector cut-off current VCB=100V; IE=0 50 IEBO Emitter cut-off current VEB=3V; IC=0 50 hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE-2 DC current gain IC=1A ; VCE=5V 40 200 hFE-3 fT DC current gain IC=3A ; VCE=5V IC=0.5A; VCE=5V 20 Transition frequency 20 MHz COB Collector output capacitance f=1MHz ; VCB=10V 170 pF hFE-2 Classifications R 40-80 Q 60-120 P 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1499 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3