2SD1500

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1500 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 10A ·Low Saturation Voltage APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A IB B Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE VECF COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain C-E Diode Forward Voltage Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 10mA; IB= 0 IC= 10A; IB= 25mA IC= 10A; IB= 25mA VCB= 150V; IE= 0 VEB= 8V; IC= 0 IC= 10A; VCE= 2V IF= 10A IE= 0; VCB= 50V, ftest= 1MHz IC= 1A; VCE= 5V 1000 MIN 100 2SD1500 TYP. MAX UNIT V 1.5 2.0 10 16 V V μA mA 3.0 75 20 V pF MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IB1= -IB2= 25mA; RL= 5Ω; VCC= 50V 0.6 3.0 1.0 μs μs μs isc Website：www.iscsemi.cn 2