2SD1525

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1525 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 20A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 100V(Min.) APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 30 A IB B Base Current- Continuous 5 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 VECF fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff current Emitter Cutoff current DC Current Gain DC Current Gain C-E Diode Forward Voltage Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 50mA, IB= 0 IC= 20A, IB= 0.2A IC= 20A, IB= 0.2A VCB= 100V, IE= 0 VEB= 5V, IC= 0 IC= 20A; VCE= 5V IC= 30A; VCE= 5V IF= 10A IC= 1A; VCE= 5V IE= 0; VCB= 10V; ftest= 1MHz 10 500 1000 200 MIN 100 2SD1525 TYP. MAX UNIT V 1.5 2.5 0.1 10 V V mA mA 3.0 V MHz pF Switching Times Turn-On Time Storage Time Fall Time IB1 = -IB2= 10mA; VCC= 50V; RL= 10Ω 1.5 10 1.5 μs μs μs ton tstg tf isc Website：www.iscsemi.cn