2SD1531

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1531 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage APPLICATIONS ·Designed for AF output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICP Collector Current-Peak Collector Power Dissipation @ TC=25℃ 4 A 5 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1531 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 50 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA; IB= 0 B 40 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.5 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 1.0 μA ICEO Collector Cutoff Current VCE= 10V; IB= 0 B 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE DC Current Gain IC= 1A; VCE= 5V 50 220 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 150 MHz COB Collector Output Capacitance IE= 0; VCB= 20V; f= 1MHz 20 pF hFE Classifications P 50-100 Q 80-160 R 120-220 isc Website：www.iscsemi.cn 2