2SD1545

INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor 2SD1545 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Color TV horizontal output applications ·Switching regulator output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A IB Base Current- Continuous 2.5 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1545 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 4.0A; IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.0A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 500V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 1.0 mA hFE DC Current Gain IC= 1A ; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V 3 MHz COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz 165 pF tf Fall Time ICP= 4A , IB1(end)= 0.8A 0.5 1.0 μs 2 INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor 2SD1545 3