2SD1547

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1547 DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Color TV horizontal output applications ·Switching regulator output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol · Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 7 3.5 50 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1547 TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 3.0 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V 8 20 fT Transition frequency IC=0.1A ; VCE=10V 3 MHz COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 165 pF tf Fall time ICP=6A ;IB1(end)=1.2A 0.5 1.0 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1547 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3