2SD1548

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1548 DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Color TV horizontal output applications ·Switching regulator output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol · Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1400 600 5 10 5 50 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat ICBO IEBO hFE fT COB tf PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance Fall time CONDITIONS IC=8A ;IB=2A IC=8A ;IB=2A VCB=500V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz ICP=7A ;IB1(end)=1.5A 8 3 MIN 2SD1548 TYP. MAX 5.0 1.6 10 1 UNIT V V μA mA MHz pF 1.0 μs 165 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1548 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3