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2SD1551

2SD1551

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SD1551 - Silicon NPN Power Transistors - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2SD1551 数据手册
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1551 DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·For color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol · Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 5 2.5 50 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1551 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0 600 V VCEsat VBEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A IC=4A; IB=0.8A 5.0 V Base-emitter saturation voltage 1.5 V μA μA ICBO Collector cut-off current VCB=800V; IE=0 10 IEBO Emitter cut-off current VEB=5V; IC=0 10 hFE DC current gain IC=1A ; VCE=5V 8 fT Transition frequency IC=0.1A ; VCE=10V 3 MHz COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 165 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1551 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3
2SD1551 价格&库存

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