Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1555
DESCRIPTION ・With TO-3P(H)IS package ・Built-in damper diode ・High voltage ,high speed ・Low collector saturation voltage APPLICATIONS ・For color TV horizontal output applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol
・
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 5 2.5 50 150 -55~150 UNIT V V V A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SD1555
TYP.
MAX
UNIT
V(BR)EBO
Emitter-base breakdown voltage
IE=0.2A , IC=0
5
V
VCEsat VBEsat
Collector-emitter saturation voltage
IC=4A ;IB=0.8A IC=4A; IB=0.8A
3.0
5.0
V
Base-emitter saturation voltage
1.5
V μA
ICBO
Collector cut-off current
VCB=500V; IE=0
10
hFE
DC current gain
IC=1A ; VCE=5V
8
fT
Transition frequency
IC=0.1A ; VCE=10V
3
MHz
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
165
pF
VF tf
Diode forward voltage
IF=5A 0.5
2.0
V μs
Fall time
ICP=4A ;IB1(end)=0.8A
1.0
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1555
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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