2SD1559

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1559 DESCRIPTION ・With TO-3P(I) package ・Complement to type 2SB1079 ・DARLINGTON APPLICATIONS ・For low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 100 100 7 20 30 3 100 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat-1 VCEsat -2 VBE sat-1 VBE sat-2 ICBO ICEO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=25mA ,RBE=∞ IC=0.1mA ,IE=0 IE=50mA ,IC=0 IC=10A; IB=20mA IC=20A; IB=200mA IC=10A; IB=20mA IC=20A; IB=200mA VCB=100V; IE=0 VCE=80V; RBE=∞ IC=10A ; VCE=3V 1000 MIN 100 100 7 TYP. 2SD1559 MAX UNIT V V V 2.0 3.0 2.5 3.5 100 1.0 20000 V V V V μA mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=10A; IB1=-IB2=20mA 1.0 9.0 3.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1559 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3