2SD1562

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1562 2SD1562A DESCRIPTION ・With TO-220C package ・Complement to type 2SB1085/1085A ・High transition frequency APPLICATIONS ・For low freuqency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER 2SD1562 VCBO Collector-base voltage 2SD1562A 2SD1562 VCEO Collector-emitter voltage 2SD1562A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 1.5 150 -55~150 ℃ ℃ Open collector Open base 160 5 1.5 3.0 20 W V A A Open emitter 160 120 V CONDITIONS VALUE 120 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD1562 V(BR)CEO Collector-emitter breakdown voltage 2SD1562A 2SD1562 V(BR)CBO Collector-base breakdown voltage 2SD1562A V(BR)EBO VCEsat VBEsat ICBO IEBO Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on saturation voltage Collector cut-off current Emitter cut-off current 2SD1562 hFE DC current gain 2SD1562A fT COB Transition frequency Output capacitance IE=-0.1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.1A ; VCE=5V IE=50μA; IC=0 IC=1 A;IB=0.1 A IC=1 A;IB=0.1 A VCB=120V; IE=0 VEB=4V; IC=0 IC=50μA; IE=0 IC=1mA; IB=0 CONDITIONS 2SD1562 2SD1562A MIN 120 TYP. MAX UNIT V 160 120 V 160 5 2.0 1.5 1.0 1.0 60 60 80 20 320 200 MHz pF V V V μA μA hFE classifications TYPE 2SD1562 2SD1562A D 60-120 60-120 E 100-200 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1562 2SD1562A Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3