Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1562 2SD1562A
DESCRIPTION ・With TO-220C package ・Complement to type 2SB1085/1085A ・High transition frequency APPLICATIONS ・For low freuqency power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
・
Absolute maximum ratings(Tc=25℃)
SYMBOL PARAMETER 2SD1562 VCBO Collector-base voltage 2SD1562A 2SD1562 VCEO Collector-emitter voltage 2SD1562A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 1.5 150 -55~150 ℃ ℃ Open collector Open base 160 5 1.5 3.0 20 W V A A Open emitter 160 120 V CONDITIONS VALUE 120 V UNIT
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD1562 V(BR)CEO Collector-emitter breakdown voltage 2SD1562A 2SD1562 V(BR)CBO Collector-base breakdown voltage 2SD1562A V(BR)EBO VCEsat VBEsat ICBO IEBO Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on saturation voltage Collector cut-off current Emitter cut-off current 2SD1562 hFE DC current gain 2SD1562A fT COB Transition frequency Output capacitance IE=-0.1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.1A ; VCE=5V IE=50μA; IC=0 IC=1 A;IB=0.1 A IC=1 A;IB=0.1 A VCB=120V; IE=0 VEB=4V; IC=0 IC=50μA; IE=0 IC=1mA; IB=0 CONDITIONS
2SD1562 2SD1562A
MIN 120
TYP.
MAX
UNIT
V 160 120 V 160 5 2.0 1.5 1.0 1.0 60 60 80 20 320 200 MHz pF V V V μA μA
hFE classifications
TYPE 2SD1562 2SD1562A
D 60-120 60-120
E 100-200 100-200
F 160-320
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1562 2SD1562A
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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