2SD1577

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1577 DESCRIPTION ・With TO-3PFa package ・Wide area of safe operation ・High voltage,high speed APPLICATIONS ・Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 700 6 5 17 3.5 100 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1577 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2A 2.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2A 1.3 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V μA VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 50 1 mA μA IEBO Emitter cut-off current VEB=5V; IC=0 50 hFE DC current gain IC=2A ; VCE=10V 4 15 Switching times μs μs tstg Storage time IC=4A; LB=10μH IBend=1.5A Fall time 11 tf 1 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1577 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3