2SD1580

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1580 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A ·High Collector Power Dissipation ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ 10 A 1.5 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 1mA; IB= 0 B 2SD1580 MIN 80 100 5 TYP. MAX UNIT V V V IC= 50μA; IE= 0 IE= 50μA; IC= 0 IC= 4A; IB= 0.4A B 1.0 1.5 10 10 60 5 150 320 V V μA μA IC= 4A; IB= 0.4A B VCB= 100V; IE= 0 VEB= 4V; IC= 0 IC= 1A; VCE= 5V IE= -0.5A; VCE= 5V IE= 0; VCB= 10V; ftest= 1.0MHz MHz pF hFE Classifications D 60-120 E 100-200 F 160-320 isc Website：www.iscsemi.cn 2