2SD1585

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1585 DESCRIPTION ・With TO-220Fa package ・VCEO≥60V;VEBO≥7V;IC(DC)≤3.0A ・Complement to type 2SB1094 APPLICATIONS ・For use in audio frequency power amplifier and general purpose applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 15 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 60 60 7 3 5 0.6 2.0 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1585 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 60 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 1.5 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.2A 2.0 V μA μA ICBO Collector cut-off current VCB=60V; IE=0 10 IEBO Emitter cut-off current VEB=7V; IC=0 10 hFE-1 DC current gain IC=50mA ; VCE=5V 20 hFE-2 DC current gain IC=0.5A ; VCE=5V 40 200 fT Transition frequency IC=0.1A; VCE=5V 16 MHz COB Collector output capacitance f=1MHz ; VCB=10V 48 pF hFE-2 Classifications M 40-80 L 60-120 K 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1585 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3