2SD1588

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1588 DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB1097 ・Low speed switching APPLICATIONS ・For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 100 60 7 7 15 3.5 30 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1588 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA , IB=0 60 V VCEsat VBEsat Collector-emitter saturation voltage IC=5A; IB=0.5A IC=5A ;IB=0.5A 0.5 V Base-emitter saturation voltage 1.5 V μA μA ICBO Collector cut-off current VCB=80V; IE=0 10 IEBO Emitter cut-off current VEB=5V; IC=0 10 hFE-1 DC current gain IC=3A ; VCE=1V 40 200 hFE-2 DC current gain IC=5A ; VCE=1V 20 hFE-1 Classifications M 40-80 L 60-120 K 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1588 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3