2SD1590

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1590 DESCRIPTION ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A ·Complement to Type 2SB1099 APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC ICP Collector Current-Continuous 8 A Collector Current-Pulse 12 A IB B Base Current-Continuous Collector Power Dissipation @ Ta=25℃ 0.8 A 2 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 150 ℃ ℃ Tstg Storage Temperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1590 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA B 1.5 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 3A; IB= 3mA B 2.0 V μA Collector Cutoff Current VCB= 100V; IE= 0 1.0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE -1 DC Current Gain IC= 3A; VCE= 2V 2000 15000 hFE -2 DC Current Gain IC= 5A; VCE= 2V 500 Switching times μs μs μs ton Turn-on Time IC= 3A, IB1= -IB2= 3mA; RL= 16.7Ω; VCC≈ 50V 1.0 tstg Storage Time 3.5 tf Fall Time 1.2 hFE-1 Classifications M 2000-5000 L 3000-7000 K 5000-15000 isc Website：www.iscsemi.cn 2