2SD1591

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1591 DESCRIPTION ・With TO-220Fa package ・DARLINGTON ・Complement to type 2SB1100 APPLICATIONS ・Low frequency power amplification ・Low speed power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 150 100 7 10 15 0.5 2 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1591 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 100 V VCEsat Collector-emitter saturation voltage IC=10A; IB=25mA 1.5 V VBEsat Base-emitter saturation voltage IC=10A; IB=25mA 2.0 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA ICEO Collector cut-off current VCE=100V; IE=0 500 μA IEBO Emitter cut-off current VEB=7V ;IC=0 5 mA hFE DC current gain IC=10A ; VCE=2V 1000 30000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1591 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3