2SD1594

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1594 DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage APPLICATIONS ・Low frequency power amplifier ・High speed switching industrial use PINNING PIN 1 2 3 DESCRIPTION Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 40 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 150 100 7 7 15 3.5 1.5 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=5A , IB1=0.5A,L=1mH IC=5A ;IB=0.5A IC=5A; IB=0.5A VCB=100V ;IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=5A ; VCE=5V 40 40 20 MIN 60 TYP. 2SD1594 MAX UNIT V 0.6 1.5 10 10 V V μA μA 240 Switching times ton ts tf Turn-on time Storage time Fall time IC=5A ;IB1=0.5A IB2=-0.5A; VCC=50V RL=10Ω 0.5 0.5 1.5 μs μs μs hFE-2 Classifications R 40-80 O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1594 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3