2SD1597

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1597 DESCRIPTION ·Collector Current -IC= 30A ·High DC Current Gain: hFE= 1000(Min)@ IC= 15A ·Low Collector Saturation Voltage APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 1.5 A PC 80 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1597 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ;IB=0 B 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ;IC=0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 30A; IB= 0.1A 2.0 V VBE(sat) ICEO Base-Emitter Saturation Voltage IC= 30A; IB= 0.1A 2.5 V Collector Cutoff Current VCE= 60V; IB= 0 B 1.0 mA μA ICBO Collector Cutoff Current VCB= 120V;IE= 0 10 IEBO Emitter Cutoff Current VEB= 7V; IC=0 5 mA hFE DC Current Gain IC= 15A ; VCE= 2V 1000 isc Website：www.iscsemi.cn 2