2SD1603

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1603 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·Complement to Type 2SB1103 APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO ICEO hFE VECF PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain C-E Diode Forward Voltage CONDITIONS IC= 25mA; RBE= ∞ IE= 50mA; IC= 0 IC= 4A; IB= 8mA B 2SD1603 MIN 60 7 TYP. MAX UNIT V V 1.5 3.0 2.0 3.5 100 10 1000 20000 3.0 V V V V μA μA IC= 8A; IB= 80mA B IC= 4A; IB= 8mA B IC= 8A; IB= 80mA B VCB= 60V; IE= 0 VCE= 50V; RBE= ∞ IC= 4A; VCE= 3V IF= 8A V Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 4A, IB1= -IB2= 8mA 0.5 5.0 1.0 μs μs μs isc Website：www.iscsemi.cn 2