2SD1608

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1608 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·High Speed Switching APPLICATIONS ·Designed for medium speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ 12 A 2 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO ICEO hFE PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain CONDITIONS IC= 2A; L= 10mH IC= 4A; IB= 8mA B 2SD1608 MIN 120 TYP. MAX UNIT V 1.5 3.0 2.0 3.5 100 10 1000 20000 V V V V μA μA IC= 8A; IB= 80mA B IC= 4A; IB= 8mA B IC= 8A; IB= 80mA B VCB= 120V; IE= 0 VCE= 100V; IB= 0 IC= 4A; VCE= 3V Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 4A, IB1= -IB2= 8mA 0.7 6.0 2.0 μs μs μs isc Website：www.iscsemi.cn 2