2SD1633

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1633 DESCRIPTION ・With TO-220Fa package ・DARLINGTON ・High speed switching ・Good linearity of hFE APPLICATIONS ・Power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 100 100 7 5 8 0.5 2 W V A A A UNIT V V Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.2A , IB=0 IC=3A; IB=3mA IC=3A; IB=3mA VCB=100V;IE=0 VCE=100V; IB=0 VEB=7V; IC=0 IC=3A ; VCE=3V 1500 MIN 100 2SD1633 TYP. MAX UNIT V 1.5 2.0 100 100 5 10000 V V μA μA mA Switching times Turn-on time Storage time Fall time IC=3A ;IB1=3mA IB2=-3mA; VCC=50V 3.0 5.0 3.0 μs μs μs ton ts tf hFE Classifications Q 1500-6000 P 5000-10000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1633 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3