2SD1634

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1634 DESCRIPTION ・With TO-220Fa package ・DARLINGTON ・High speed switching ・Good linearity of hFE APPLICATIONS ・Power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 100 100 7 8 12 0.5 50 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.2A , IB=0 IC=5A; IB=5mA IC=5A ;IB=5mA VCB=100V;IE=0 VCE=100V; IB=0 VEB=7V; IC=0 IC=5A ; VCE=3V 1500 MIN 100 2SD1634 TYP. MAX UNIT V 1.5 2.0 100 100 5 10000 V V μA μA mA Switching times Turn-on time Storage time Fall time IC=8A ;IB1=8mA IB2=-8mA; VCC=50V 3.0 5.0 3.0 μs μs μs ton ts tf hFE Classifications Q 1500-6000 P 5000-10000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1634 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3