2SD1646

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1646 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min.) ·High DC Current Gain : hFE= 1000(Min) @IC= 1A ·Low Collector Saturation Voltage APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ 3 A 1.5 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1646 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 B 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA B 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3 mA hFE DC Current Gain IC= 1A; VCE= 2V 1000 10000 COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 25 pF isc Website：www.iscsemi.cn 2