2SD1650

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1650 DESCRIPTION ・With TO-3PML package ・Built-in damper diode ・High breakdown voltage ・High speed switching APPLICATIONS ・For color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol ・ ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 3.5 50 150 -55~150 V A W ℃ ℃ UNIT V Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(SUS)CEO VCEsat VBEsat ICBO ICES IEBO hFE fT VF PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency Diode forward voltage CONDITIONS IC=0.1A , IB=0 IC=2.5A ;IB=0.8A IC=2.5A ;IB=0.8A VCB=800V; IE=0 VCES=1500V; RBE=∞ VEB=4V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=10V IF=3.5A 40 8 MIN 800 2SD1650 TYP. MAX UNIT V 5.0 8.0 1.5 10 1.0 130 V V μA mA mA 3 2.0 MHz V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1650 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3