2SD1651

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1651 DESCRIPTION ・With TO-3PML package ・Built-in damper diode ・High breakdown voltage ・High speed switching APPLICATIONS ・For color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol ・ ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 5 60 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1651 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0 800 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 3.0 5.0 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.8A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA ICES Collector cut-off current VCES=1500V; RBE=∞ 1.0 mA IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA hFE DC current gain IC=1A ; VCE=5V 8 fT Transition frequency IC=1A ; VCE=10V 3 MHz VF Diode forward voltage IF=5A 2.0 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1651 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3