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2SD1652

2SD1652

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SD1652 - Silicon NPN Power Transistors - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2SD1652 数据手册
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1652 DESCRIPTION ・With TO-3PML package ・Built-in damper diode ・High breakdown voltage ・High speed switching APPLICATIONS ・For color TV horizontal deflection output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol ・ ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 6 16 60 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1652 TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200mA , IC=0 7 V V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; RBE=∞ 800 V V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 1500 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 5.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA hFE DC current gain IC=1A ; VCE=5V 8 fT Transition frequency IC=1A ; VCE=10V 3 MHz VF Diode forward voltage IF=6A IC=5A;IB1=1A;IB2=-2A VCC=200V;RL=40Ω 2.0 V tf Fall time 0.4 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1652 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3
2SD1652 价格&库存

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