Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1652
DESCRIPTION ・With TO-3PML package ・Built-in damper diode ・High breakdown voltage ・High speed switching APPLICATIONS ・For color TV horizontal deflection output applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol
・
ABSOLUTE MAXIMUM RATINGS AT Tc=25℃
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 6 16 60 150 -55~150 UNIT V V V A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SD1652
TYP.
MAX
UNIT
V(BR)EBO
Emitter-base breakdown voltage
IE=200mA , IC=0
7
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=0.1A; RBE=∞
800
V
V(BR)CBO
Collector-base breakdown voltage
IC=5mA; IE=0
1500
V
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=1A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=4V; IC=0
40
130
mA
hFE
DC current gain
IC=1A ; VCE=5V
8
fT
Transition frequency
IC=1A ; VCE=10V
3
MHz
VF
Diode forward voltage
IF=6A IC=5A;IB1=1A;IB2=-2A VCC=200V;RL=40Ω
2.0
V
tf
Fall time
0.4
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1652
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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