2SD1655

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1655 DESCRIPTION ・With TO-3PML package ・High voltage;high speed ・High reliability. APPLICATIONS ・For color TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 5 16 60 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1655 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=0.1A; RBE=∞ MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage 800 V(BR)CBO VCEsat Collector-base breakdown voltage IC=5mA; IE=0 IC=4A;IB=0.8A 1500 Collector-emitter saturation voltage 5.0 V VBEsat Base-emitter saturation voltage IC=4A;IB=0.8A 1.5 V IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA μA ICBO Collector cut-off current VCB=800V; IE=0 10 hFE DC current gain IC=1 A ; VCE=5V 8 fT Transition frequency IC=1 A ; VCE=10V IC=4A;IB1=0.8A;IB2=-1.6A VCC=200V;RL=50Ω 3 MHz μs tf Fall time 0.7 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1655 Fig.2 Outline dimensions 3